? semiconductor components industries, llc, 2009 august, 2009 ? rev. 4 1 publication order number: mmbt2484lt1/d MMBT2484LT1G low noise transistor npn silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo 60 vdc collector ? base voltage v cbo 60 vdc emitter ? base voltage v ebo 6.0 vdc collector current ? continuous i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://onsemi.com sot ? 23 (to ? 236) case 318 style 6 device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. MMBT2484LT1G sot ? 23 (pb ? free) 3,000 / tape & reel 1 2 3 *date code orientation and/or overbar may vary depending upon manufacturing location. 1 1u m 1u = device code m = date code* = pb ? free package (note: microdot may be in either location) marking diagram collector 3 1 base 2 emitter
MMBT2484LT1G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo 60 ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? vdc collector cutoff current (v cb = 45 vdc, i e = 0) (v cb = 45 vdc, i e = 0, t a = 150 c) i cbo ? ? 10 10 nadc adc emitter cutoff current (v eb = 5.0 vdc, i c = 0) i ebo ? 10 nadc on characteristics dc current gain (i c = 1.0 madc, v ce = 5.0 vdc) (i c = 10 madc, v ce = 5.0 vdc) h fe 250 ? ? 800 ? collector ? emitter saturation voltage (i c = 1.0 madc, i b = 0.1 madc) v ce(sat) ? 0.35 vdc base ? emitter on voltage (i c = 1.0 madc, v ce = 5.0 vdc) v be(on) ? 0.95 vdc small ? signal characteristics output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo ? 6.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? 6.0 pf noise figure (i c = 10 adc, v ce = 5.0 vdc, r s = 10 k , f = 1.0 khz, bw = 200 hz) nf ? 3.0 db r s i n e n ideal transistor figure 1. transistor noise model
MMBT2484LT1G http://onsemi.com 3 figure 2. effects of frequency f, frequency (hz) 7.0 10 20 30 5.0 figure 3. effects of collector current i c , collector current (ma) figure 4. noise current f, frequency (hz) figure 5. wideband noise figure r s , source resistance (ohms) 3.0 10 noise characteristics (v ce = 5.0 vdc, t a = 25 c) noise voltage e n , noise voltage (nv) e n , noise voltage (nv) i n , noise current (pa) nf, noise figure (db) 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k bandwidth = 1.0 hz bandwidth = 1.0 hz bandwidth = 1.0 hz i c = 10 ma 300 a 30 a r s 0 3.0 ma 1.0 ma 7.0 10 20 30 5.0 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 r s 0 f = 10 hz 100 hz 1.0 khz 10 khz 100 khz i c = 10 ma 3.0 ma 1.0 ma 300 a 100 a 10 a r s 0 10 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 0.1 0.2 0.3 1.0 0.7 2.0 3.0 5.0 7.0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 0 4.0 8.0 12 16 20 bandwidth = 10 hz to 15.7 khz i c = 1.0 ma 500 a 100 a 10 a 100 hz noise data 300 200 100 3.0 5.0 7.0 10 20 30 50 70 r s , source resistance (ohms) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k v t , total noise voltage (nv) nf, noise figure (db) 0 4.0 8.0 12 16 20 figure 6. total noise voltage bandwidth = 1.0 hz i c = 10 ma 3.0 ma 1.0 ma 300 a 100 a 30 a 10 a 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k i c = 10 ma 300 a 100 a 30 a 3.0 ma 1.0 ma 10 a bandwidth = 1.0 hz r s , source resistance (ohms) figure 7. noise figure 0.5
MMBT2484LT1G http://onsemi.com 4 figure 8. dc current gain i c , collector current (ma) 0.4 1.0 2.0 3.0 4.0 0.3 0.01 h , dc current gain (normalized) 0.05 2.0 3.0 10 0.02 0.03 0.2 1.0 0.1 5.0 fe v ce = 5.0 v t a = 125 c 25 c -55 c 0.7 0.5 0.5 0.2 0.3 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 figure 9. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 10. temperature coefficients i c , collector current (ma) v, voltage (volts) 0.01 0 -0.8 -1.2 -1.6 -2.4 t j = 25 c v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v t j = 25 c to 125 c -55 c to 25 c r vbe , base-emitter temperature coefficient (mv/ c) -0.4 -2.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f t , current-gain bandwidth product (mhz) c, capacitance (pf) 8.0 0.8 1.0 2.0 3.0 4.0 6.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t j = 25 c c cb c ob c eb c ib 1.0 2.0 5.0 3.0 7.0 10 20 30 50 70 100 500 300 200 70 50 100 v ce = 5.0 v t j = 25 c figure 11. capacitance v r , reverse voltage (volts) figure 12. current ? gain ? bandwidth product i c , collector current (ma)
MMBT2484LT1G http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 6: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmbt2484lt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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